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2N5401RLRMG

  • 2N5401RLRMG
  • 2N5401RLRMG

2N5401RLRMG

2N5401RLRMG

Rochester Electronics, LLC

2N5401RLRMG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website

SOT-23

2N5401RLRMG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Box (TB)
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) 40
Pin Count 3
JESD-30 Code O-PBCY-T3
Qualification Status COMMERCIAL
Number of Elements 1
Configuration SINGLE
Power - Max 625mW
Transistor Application AMPLIFIER
Polarity/Channel Type PNP
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 60 @ 10mA 5V
Current - Collector Cutoff (Max) 50nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
Voltage - Collector Emitter Breakdown (Max) 150V
Current - Collector (Ic) (Max) 600mA
Transition Frequency 100MHz
Frequency - Transition 300MHz
RoHS Status ROHS3 Compliant
2N5401RLRMG Product Details

2N5401RLRMG Overview


This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.

2N5401RLRMG Features


the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz

2N5401RLRMG Applications


There are a lot of Rochester Electronics, LLC 2N5401RLRMG applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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