2N5401RLRMG Overview
This device has a DC current gain of 60 @ 10mA 5V, which is the ratio between the collector current and the base current.When VCE saturation is 500mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).Single BJT transistor contains a transSingle BJT transistorion frequency of 100MHz.Collector Emitter Breakdown occurs at 150VV - Maximum voltage.
2N5401RLRMG Features
the DC current gain for this device is 60 @ 10mA 5V
the vce saturation(Max) is 500mV @ 5mA, 50mA
a transition frequency of 100MHz
2N5401RLRMG Applications
There are a lot of Rochester Electronics, LLC 2N5401RLRMG applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
