KSH29CTF Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 15 @ 1A 4V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 700mV, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Emitter base voltages of 5V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.The part has a transition frequency of 3MHz.There is a breakdown input voltage of 100V volts that it can take.When collector current reaches its maximum, it can reach 1A volts.

KSH29CTF Features

the DC current gain for this device is 15 @ 1A 4V
a collector emitter saturation voltage of 700mV
the vce saturation(Max) is 700mV @ 125mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 3MHz

KSH29CTF Applications

There are a lot of ON Semiconductor KSH29CTF applications of single BJT transistors.

• Inverter
• Driver
• Muting
• Interface