BCX70JT116 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 2mA 5V.This design offers maximum flexibility with a collector emitter saturation voltage of 550mV.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 550mV @ 1.25mA, 50mA.A constant collector voltage of 200mA is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Its current rating is 200mA, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.125MHz is present in the transition frequency.Single BJT transistor is possible to have a collector current as low as 200mA volts at Single BJT transistors maximum.
BCX70JT116 Features
the DC current gain for this device is 250 @ 2mA 5V
a collector emitter saturation voltage of 550mV
the vce saturation(Max) is 550mV @ 1.25mA, 50mA
the emitter base voltage is kept at 5V
the current rating of this device is 200mA
a transition frequency of 125MHz
BCX70JT116 Applications
There are a lot of ROHM Semiconductor BCX70JT116 applications of single BJT transistors.
- Muting
- Inverter
- Driver
- Interface
