KSH31TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSH31TF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Voltage - Rated DC
40V
Max Power Dissipation
1.56W
Current Rating
3A
Frequency
3MHz
Base Part Number
KSH31
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Gain Bandwidth Product
3MHz
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
10 @ 3A 4V
Current - Collector Cutoff (Max)
50μA
Vce Saturation (Max) @ Ib, Ic
1.2V @ 375mA, 3A
Collector Emitter Breakdown Voltage
40V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
5V
hFE Min
10
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.116477
$1.116477
10
$1.053280
$10.5328
100
$0.993660
$99.366
500
$0.937415
$468.7075
1000
$0.884354
$884.354
KSH31TF Product Details
KSH31TF Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 10 @ 3A 4V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.2V @ 375mA, 3A.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (3A).Collector current can be as low as 3A volts at its maximum.
KSH31TF Features
the DC current gain for this device is 10 @ 3A 4V the vce saturation(Max) is 1.2V @ 375mA, 3A the emitter base voltage is kept at 5V the current rating of this device is 3A
KSH31TF Applications
There are a lot of ON Semiconductor KSH31TF applications of single BJT transistors.