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KSH42CTF

KSH42CTF

KSH42CTF

ON Semiconductor

KSH42CTF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSH42CTF Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2017
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -100V
Max Power Dissipation 1.75W
Terminal Form GULL WING
Current Rating -6A
Frequency 3MHz
Base Part Number KSH42
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity PNP, NPN
Element Configuration Single
Power Dissipation 1.75W
Transistor Application AMPLIFIER
Gain Bandwidth Product 3MHz
Transistor Type PNP
Collector Emitter Voltage (VCEO) 100V
Max Collector Current 6A
DC Current Gain (hFE) (Min) @ Ic, Vce 15 @ 3A 4V
Current - Collector Cutoff (Max) 50μA
Vce Saturation (Max) @ Ib, Ic 1.5V @ 600mA, 6A
Collector Emitter Breakdown Voltage 100V
Transition Frequency 3MHz
Collector Emitter Saturation Voltage -1.5V
Max Breakdown Voltage 100V
Collector Base Voltage (VCBO) -100V
Emitter Base Voltage (VEBO) -5V
hFE Min 15
Height 2.3mm
Length 6.6mm
Width 6.1mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.070394 $0.070394
500 $0.051760 $25.88
1000 $0.043133 $43.133
2000 $0.039572 $79.144
5000 $0.036983 $184.915
10000 $0.034403 $344.03
15000 $0.033272 $499.08
50000 $0.032715 $1635.75
KSH42CTF Product Details

KSH42CTF Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 15 @ 3A 4V.The collector emitter saturation voltage is -1.5V, which allows for maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1.5V @ 600mA, 6A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at -5V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -6A current rating.As a result, the part has a transition frequency of 3MHz.Breakdown input voltage is 100V volts.Collector current can be as low as 6A volts at its maximum.

KSH42CTF Features


the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of -1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at -5V
the current rating of this device is -6A
a transition frequency of 3MHz

KSH42CTF Applications


There are a lot of ON Semiconductor KSH42CTF applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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