KSH50TF Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 300mA 10V.As it features a collector emitter saturation voltage of 1V, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.In this part, there is a transition frequency of 10MHz.An input voltage of 400V volts is the breakdown voltage.During maximum operation, collector current can be as low as 1A volts.
KSH50TF Features
the DC current gain for this device is 30 @ 300mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 200mA, 1A
the emitter base voltage is kept at 5V
the current rating of this device is 1A
a transition frequency of 10MHz
KSH50TF Applications
There are a lot of ON Semiconductor KSH50TF applications of single BJT transistors.
- Muting
- Driver
- Interface
- Inverter
