MPSA63RLRAG Overview
In this device, the DC current gain is 10000 @ 100mA 5V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1.5V @ 100μA, 100mA.A -500mA continuous collector voltage is necessary to achieve high efficiency.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 10V.According to definition, current rating describes the maximum current a fuse can carry indefinitely without deteriorating too much, and this device has no current rating.The part has a transition frequency of 125MHz.This device can take an input voltage of 30V volts before it breaks down.The maximum collector current is 500mA volts.
MPSA63RLRAG Features
the DC current gain for this device is 10000 @ 100mA 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 100μA, 100mA
the emitter base voltage is kept at 10V
the current rating of this device is -500mA
a transition frequency of 125MHz
MPSA63RLRAG Applications
There are a lot of ON Semiconductor MPSA63RLRAG applications of single BJT transistors.
- Interface
- Muting
- Inverter
- Driver