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KSK30YBU

KSK30YBU

KSK30YBU

ON Semiconductor

KSK30YBU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

KSK30YBU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package TO-92-3
Operating Temperature 125°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSK30
Power - Max 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 8.2pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0) 1.2mA @ 10V
Voltage - Cutoff (VGS off) @ Id 400mV @ 100nA
Voltage - Breakdown (V(BR)GSS) 50V
KSK30YBU Product Details

KSK30YBU Description


KSK30YBU is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. The KSK30YBU junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits.



KSK30YBU Features


High Input Impedance: IGSS=1nA (MAX)

Low Noise: NF=0.5dB (TYP)

High Voltage: VGDS= -50V

Package: TO-92

Low noise


KSK30YBU Applications


Small signal amplifiers

Current limiters


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