KSK30YBU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
KSK30YBU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package
TO-92-3
Operating Temperature
125°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSK30
Power - Max
100mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
8.2pF @ 0V
Current - Drain (Idss) @ Vds (Vgs=0)
1.2mA @ 10V
Voltage - Cutoff (VGS off) @ Id
400mV @ 100nA
Voltage - Breakdown (V(BR)GSS)
50V
KSK30YBU Product Details
KSK30YBU Description
KSK30YBU is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. The KSK30YBU junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits.