KSK596ABU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
KSK596ABU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Supplier Device Package
TO-92S
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSK596
Power - Max
100mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0)
100μA @ 5V
Voltage - Cutoff (VGS off) @ Id
600mV @ 1μA
Voltage - Breakdown (V(BR)GSS)
20V
Current Drain (Id) - Max
1mA
KSK596ABU Product Details
KSK596ABU Description
KSK596ABU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes KSK596ABU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor AFT09MS015NT1 has the common source configuration.