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KSK596ABU

KSK596ABU

KSK596ABU

ON Semiconductor

KSK596ABU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

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KSK596ABU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSK596
Power - Max 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0) 100μA @ 5V
Voltage - Cutoff (VGS off) @ Id 600mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 20V
Current Drain (Id) - Max 1mA
KSK596ABU Product Details

KSK596ABU Description

 

KSK596ABU transistor is an N-channel MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes KSK596ABU MOSFET suitable for ISM applications in which reliability and durability are essential. ON Semiconductor AFT09MS015NT1 has the common source configuration.

 

 

KSK596ABU Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

KSK596ABU Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display

 


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