2SK2394-7-TB-E                  Description

IGBT (insulated gate bipolar transistor) provides a high switching speed necessary for PWM VFD operation. IGBTs are capable of switching on and off several thousand times a second. A VFD IGBT can turn on in less than 400 nanoseconds and off in approximately 500 nanoseconds.

2SK2394-7-TB-E                          Features

· 75% lower Eoff compared to previous generation

combined with low conduction losses

· Short circuit withstand time – 10 ms

· Designed for:

- Motor controls

- Inverter

· NPT-Technology for 600V applications offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

· Very soft, fast recovery anti-parallel Emitter Controlled

Diode

· Pb-free lead plating; RoHS compliant

· Qualified according to JEDEC1 for target applications

2SK2394-7-TB-E                             Applications

? Industrial Control

? Medical monitoring

? Home automation/ alarm/ energy management