KSK596BU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
KSK596BU Datasheet
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Short Body
Supplier Device Package
TO-92S
Operating Temperature
150°C TJ
Packaging
Bulk
Published
2002
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
KSK596
Power - Max
100mW
FET Type
N-Channel
Input Capacitance (Ciss) (Max) @ Vds
3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0)
100μA @ 5V
Voltage - Cutoff (VGS off) @ Id
600mV @ 1μA
Voltage - Breakdown (V(BR)GSS)
20V
Current Drain (Id) - Max
1mA
KSK596BU Product Details
KSK596BU Description
KSK596BU is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. KSK596BU junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits