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KSK596BU

KSK596BU

KSK596BU

ON Semiconductor

KSK596BU datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

KSK596BU Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 Short Body
Supplier Device Package TO-92S
Operating Temperature 150°C TJ
Packaging Bulk
Published 2002
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number KSK596
Power - Max 100mW
FET Type N-Channel
Input Capacitance (Ciss) (Max) @ Vds 3.5pF @ 5V
Current - Drain (Idss) @ Vds (Vgs=0) 100μA @ 5V
Voltage - Cutoff (VGS off) @ Id 600mV @ 1μA
Voltage - Breakdown (V(BR)GSS) 20V
Current Drain (Id) - Max 1mA
KSK596BU Product Details

KSK596BU Description


KSK596BU is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. KSK596BU junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits



KSK596BU Features


Excellent voltage characteristic

Excellent transient characteristic

A gate-drain voltage of -20 V

Junction temperature of 150 °C



KSK596BU Applications


Audio

Telephone capacitor 

Microphones


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