MMBFJ175 datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website
SOT-23
MMBFJ175 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LIFETIME (Last Updated: 3 days ago)
Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Last Time Buy
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Voltage - Rated DC
-30V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
-50mA
Base Part Number
MBFJ175
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
225mW
FET Type
P-Channel
Transistor Application
SWITCHING
Breakdown Voltage
30V
Drain to Source Voltage (Vdss)
30V
Continuous Drain Current (ID)
33.5mA
Gate to Source Voltage (Vgs)
30V
FET Technology
JUNCTION
Drain to Source Resistance
125Ohm
Current - Drain (Idss) @ Vds (Vgs=0)
7mA @ 15V
Voltage - Cutoff (VGS off) @ Id
3V @ 10nA
Resistance - RDS(On)
125Ohm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
3,000
$0.16040
$0.4812
6,000
$0.15114
$0.90684
15,000
$0.14188
$2.1282
30,000
$0.13076
$3.9228
75,000
$0.12613
$9.45975
MMBFJ175 Product Details
MMBFJ175 Description
This device is designed for low-level analog switching sample-and-hold circuits and chopper-stabilized amplifiers.
MMBFJ175 Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The