KSK596PCWD Description

KSK596PCWD is a type of N-channel junction FET provided by ON Semiconductor. It is a field effect device that changes the width of the gate space charge region by applying an external gate voltage, thereby controlling the conductivity of the channel. The conductive channel between the source and drain is a rather low-conductivity material. KSK596PCWD junction FET is widely used in small signal amplifiers, current limiters, voltage-controlled resistors, switching circuits, and integrated circuits

KSK596PCWD Features

Excellent voltage characteristic

Excellent transient characteristic

Gate-drain voltage of -20 V

Junction temperature of 150 °C

KSK596PCWD Applications

Audio, telephone capacitor microphones