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KSP8099TF

KSP8099TF

KSP8099TF

ON Semiconductor

KSP8099TF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSP8099TF Datasheet

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Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package TO-92-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 625mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA
Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 500mA
Frequency - Transition 150MHz
KSP8099TF Product Details

KSP8099TF Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1mA 5V.A VCE saturation (Max) of 300mV @ 10mA, 100mA means Ic has reached its maximum value(saturated).Supplier package TO-92-3 contains the product.Collector Emitter Breakdown occurs at 80VV - Maximum voltage.

KSP8099TF Features


the DC current gain for this device is 100 @ 1mA 5V
the vce saturation(Max) is 300mV @ 10mA, 100mA
the supplier device package of TO-92-3

KSP8099TF Applications


There are a lot of ON Semiconductor KSP8099TF applications of single BJT transistors.

  • Driver
  • Interface
  • Muting
  • Inverter

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