BUL310FP Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 6 @ 3A 2.5V DC current gain.A collector emitter saturation voltage of 1.1V allows maximum design flexibility.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.1V @ 600mA, 3A.If the emitter base voltage is kept at 9V, a high level of efficiency can be achieved.Maximum collector currents can be below 5A volts.

BUL310FP Features

the DC current gain for this device is 6 @ 3A 2.5V
a collector emitter saturation voltage of 1.1V
the vce saturation(Max) is 1.1V @ 600mA, 3A
the emitter base voltage is kept at 9V

BUL310FP Applications

There are a lot of STMicroelectronics BUL310FP applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver