Welcome to Hotenda.com Online Store!

logo
userjoin
Home

MBT3904DW1T1G

  • MBT3904DW1T1G
  • MBT3904DW1T1G

MBT3904DW1T1G

MBT3904DW1T1G

ON Semiconductor

MBT3904DW1T1G datasheet pdf and Transistors - Bipolar (BJT) - Arrays product details from ON Semiconductor stock available on our website

SOT-23

MBT3904DW1T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Surface Mount
Package / Case 6-TSSOP, SC-88, SOT-363
Surface Mount YES
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Cut Tape (CT)
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Type General Purpose
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation 150mW
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 200mA
Frequency 300MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MBT3904D
Pin Count 6
Number of Elements 2
Polarity NPN
Element Configuration Dual
Power Dissipation 150mW
Transistor Application AMPLIFIER
Gain Bandwidth Product 300MHz
Transistor Type 2 NPN (Dual)
Collector Emitter Voltage (VCEO) 40V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA 1V
Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage 40V
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 300mV
Max Breakdown Voltage 40V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 6V
hFE Min 40
Turn On Time-Max (ton) 70ns
Height 990.6μm
Length 2.1844mm
Width 1.3462mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.26000 $0.26
500 $0.2574 $128.7
1000 $0.2548 $254.8
1500 $0.2522 $378.3
2000 $0.2496 $499.2
2500 $0.247 $617.5
MBT3904DW1T1G Product Details

MBT3904DW1T1G Description


MBT3904DW1T1G devices are derivatives of our popular SOT-23/SOT-323 3-lead devices. It is designed for general purpose amplifier applications and is installed in SOT-363Six-lead surface mount packages. By placing two discrete devices in one package, the device is ideal for low-power surface mount applications with limited circuit board space.


MBT3904DW1T1G  Features


? hFE, 100?300

? Low VCE(sat), ≤ 0.4 V

? Simplifies Circuit Design

? Reduces Board Space

? Reduces Component Count

? Available in 8 mm, 7?inch/3,000 Unit Tape and Reel

? S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC?Q101

Qualified and PPAP Capable

? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS

Compliant

 

MBT3904DW1T1G  Applications


low-power surface mount applications

Related Part Number

ZHB6792TA
Diodes Incorporated
ZHB6792TA
$0 $/piece
FMBA14
ON Semiconductor
FMBA14
$0 $/piece
ZXT12N50DXTC
Diodes Incorporated
ZXT12N50DXTC
$0 $/piece
BC857S-TP
Micro Commercial Co
BC857S-TP
$0 $/piece
NSS40301MDR2G
ON Semiconductor
NSS40301MDR2G
$0 $/piece
HN1B04FU-Y,LF
Toshiba Semiconductor and Storage
HN1B04FU-Y,LF
$0 $/piece
CMLT3906E TR
Central Semiconductor Corp
CMLT3906E TR
$0 $/piece
UMX4NTR
ROHM Semiconductor
UMX4NTR
$0 $/piece
QST9TR
ROHM Semiconductor
QST9TR
$0 $/piece
NSVT3906DXV6T1G
ON Semiconductor
NSVT3906DXV6T1G
$0 $/piece
view all related

Get Subscriber

Enter Your Email Address, Get the Latest News