MCH3144-TL-E datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MCH3144-TL-E Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Number of Pins
3
Packaging
Tape & Reel (TR)
JESD-609 Code
e6
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Terminal Finish
Tin/Bismuth (Sn/Bi)
Max Power Dissipation
800mW
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Power - Max
800mW
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
-260mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
260mV @ 75mA, 1.5A
Collector Emitter Breakdown Voltage
30V
Frequency - Transition
440MHz
hFE Min
200
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.906096
$2.906096
10
$2.741600
$27.416
100
$2.586415
$258.6415
500
$2.440014
$1220.007
1000
$2.301900
$2301.9
MCH3144-TL-E Product Details
MCH3144-TL-E Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 100mA 2V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 260mV @ 75mA, 1.5A.Single BJT transistor is possible for the collector current to fall as low as 2A volts at Single BJT transistors maximum.
MCH3144-TL-E Features
the DC current gain for this device is 200 @ 100mA 2V the vce saturation(Max) is 260mV @ 75mA, 1.5A
MCH3144-TL-E Applications
There are a lot of ON Semiconductor MCH3144-TL-E applications of single BJT transistors.