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MCH5908G-TL-E

MCH5908G-TL-E

MCH5908G-TL-E

ON Semiconductor

MCH5908G-TL-E datasheet pdf and Transistors - JFETs product details from ON Semiconductor stock available on our website

SOT-23

MCH5908G-TL-E Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status LIFETIME (Last Updated: 3 days ago)
Mounting Type Surface Mount
Package / Case 5-SMD, Flat Leads
Number of Pins 5
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
JESD-609 Code e6
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
Max Power Dissipation 300mW
Pin Count 5
Element Configuration Single
FET Type 2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds 10.5pF @ 5V
Continuous Drain Current (ID) 50mA
Current - Drain (Idss) @ Vds (Vgs=0) 10mA @ 5V
Voltage - Cutoff (VGS off) @ Id 300mV @ 100μA
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.28000 $0.28
500 $0.2772 $138.6
1000 $0.2744 $274.4
1500 $0.2716 $407.4
2000 $0.2688 $537.6
2500 $0.266 $665
MCH5908G-TL-E Product Details

MCH5908G-TL-E description


MCH5908G-TL-E is a type of n-channel JFET developed by On Semiconductor. it is integrated with 2-JFET contained in a MCPH5 package currently in use, improving the mounting efficiency greatly. It is formed with two chips, being equivalent to the 2SK3557. Since the junction field effect transistor (JFET) operation depends on the electric field generated by the input gate voltage, it is called the field effect. The field effect is to change the direction or magnitude of the applied electric field perpendicular to the semiconductor surface to control the density or type of majority carriers in the semiconductor conductive layer (channel).



MCH5908G-TL-E features


Drain-to-source voltage: 15v

Gate-to-drain voltage: -15v

Package: mcph5

Junction temperature: 150



MCH5908G-TL-E applications


Amplifiers

Switch circuits


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