MGSF1N03LT3

new-10%

Manufacturer part number:MGSF1N03LT3

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 1.6A SOT-23

Case Package:SOT-23

Datasheet:MGSF1N03LT3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Lead (Sn/Pb)
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	240
Reach Compliance Code	not_compliant
Current Rating	1.6A
[email protected] Reflow Temperature-Max (s)	30
Pin Count	3
JESD-30 Code	R-PDSO-G3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	420mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	730mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 5V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Rise Time	1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.1Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	Non-RoHS Compliant
Lead Free	Contains Lead