SI4102DY-T1-E3

new-10%

Manufacturer part number:SI4102DY-T1-E3

Manufacturer:Vishay Siliconix

Description:MOSFET N-CH 100V 3.8A 8-SOIC

Case Package:SOT-23

Datasheet:SI4102DY-T1-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154, 3.90mm Width)
Number of Pins	8
Supplier Device Package	8-SO
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	TrenchFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	2.4W Ta 4.8W Tc
Element Configuration	Single
Power Dissipation	2.4W
Turn On Delay Time	10 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	158mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	370pF @ 50V
Current - Continuous Drain (Id) @ 25°C	3.8A Tc
Gate Charge (Qg) (Max) @ Vgs	11nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	12 ns
Continuous Drain Current (ID)	2.7A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	370pF
Drain to Source Resistance	158mOhm
Rds On Max	158 mΩ
Radiation Hardening	No
RoHS Status	ROHS3 Compliant