MGSF1N03LT3G

new-10%

Manufacturer part number:MGSF1N03LT3G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 30V 1.6A SOT-23

Case Package:SOT-23

Datasheet:MGSF1N03LT3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Lifecycle Status	LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin (Sn)
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	30V
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	1.6A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	420mW Ta
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	730mW
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	100m Ω @ 1.2A, 10V
Vgs(th) (Max) @ Id	2.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	140pF @ 5V
Current - Continuous Drain (Id) @ 25°C	1.6A Ta
Rise Time	1ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	1 ns
Turn-Off Delay Time	16 ns
Continuous Drain Current (ID)	1.6A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.1Ohm
Drain to Source Breakdown Voltage	30V
RoHS Status	RoHS Compliant
Lead Free	Lead Free