MJD253-1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MJD253-1G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mounting Type
Through Hole
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Surface Mount
NO
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-100V
Max Power Dissipation
12.5W
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
Frequency
40MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD253
Pin Count
4
JESD-30 Code
R-PSIP-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.4W
Case Connection
COLLECTOR
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Gain Bandwidth Product
40MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
100V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
40 @ 200mA 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 100mA, 1A
Collector Emitter Breakdown Voltage
100V
Transition Frequency
40MHz
Collector Emitter Saturation Voltage
600mV
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
hFE Min
40
Height
2.38mm
Length
6.73mm
Width
6.35mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$2.319205
$2.319205
10
$2.187929
$21.87929
100
$2.064084
$206.4084
500
$1.947249
$973.6245
1000
$1.837028
$1837.028
MJD253-1G Product Details
MJD253-1G Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 200mA 1V.The collector emitter saturation voltage is 600mV, giving you a wide variety of design options.When VCE saturation is 600mV @ 100mA, 1A, transistor means Ic has reached transistors maximum value (saturated).Keeping the emitter base voltage at 7V allows for a high level of efficiency.This device has a current rating of -4A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The part has a transition frequency of 40MHz.A maximum collector current of 4A volts is possible.
MJD253-1G Features
the DC current gain for this device is 40 @ 200mA 1V a collector emitter saturation voltage of 600mV the vce saturation(Max) is 600mV @ 100mA, 1A the emitter base voltage is kept at 7V the current rating of this device is -4A a transition frequency of 40MHz
MJD253-1G Applications
There are a lot of ON Semiconductor MJD253-1G applications of single BJT transistors.