2SD1949T106R Overview

In this device, the DC current gain is 180 @ 10mA 3V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.As it features a collector emitter saturation voltage of 400mV, it allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.A constant collector voltage of 500mA is necessary for high efficiency.If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 500mA.Single BJT transistor contains a transSingle BJT transistorion frequency of 250MHz.Breakdown input voltage is 50V volts.In extreme cases, the collector current can be as low as 500mA volts.

2SD1949T106R Features

the DC current gain for this device is 180 @ 10mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 15mA, 150mA
the emitter base voltage is kept at 5V
the current rating of this device is 500mA
a transition frequency of 250MHz

2SD1949T106R Applications

There are a lot of ROHM Semiconductor 2SD1949T106R applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter