MJD340RLG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD340RLG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
8 Weeks
Lifecycle Status
ACTIVE (Last Updated: 23 hours ago)
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
300V
Max Power Dissipation
1.56W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
500mA
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD340
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
1.56W
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
300V
Max Collector Current
500mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 50mA 10V
Current - Collector Cutoff (Max)
100μA
Collector Emitter Breakdown Voltage
300V
Collector Emitter Saturation Voltage
1V
Max Breakdown Voltage
300V
Frequency - Transition
10MHz
Collector Base Voltage (VCBO)
300V
Emitter Base Voltage (VEBO)
3V
hFE Min
30
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.212405
$0.212405
10
$0.200382
$2.00382
100
$0.189040
$18.904
500
$0.178340
$89.17
1000
$0.168245
$168.245
MJD340RLG Product Details
MJD340RLG Overview
As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 30 @ 50mA 10V.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.A high level of efficiency can be achieved if the base voltage of the emitter remains at 3V.This device has a current rating of 500mA which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.The breakdown input voltage is 300V volts.Single BJT transistor is possible for the collector current to fall as low as 500mA volts at Single BJT transistors maximum.
MJD340RLG Features
the DC current gain for this device is 30 @ 50mA 10V a collector emitter saturation voltage of 1V the emitter base voltage is kept at 3V the current rating of this device is 500mA
MJD340RLG Applications
There are a lot of ON Semiconductor MJD340RLG applications of single BJT transistors.