BCP53-10T1G Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 63 @ 150mA 2V.The collector emitter saturation voltage is -500mV, which allows for maximum design flexibility.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 5V can result in a high level of efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -1.5A current rating.50MHz is present in the transition frequency.Single BJT transistor can take a breakdown input voltage of 80V volts.When collector current reaches its maximum, it can reach 1.5A volts.

BCP53-10T1G Features

the DC current gain for this device is 63 @ 150mA 2V
a collector emitter saturation voltage of -500mV
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
the current rating of this device is -1.5A
a transition frequency of 50MHz

BCP53-10T1G Applications

There are a lot of ON Semiconductor BCP53-10T1G applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter