MJD350T4G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 30 @ 50mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 3V.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-500mA).The part has a transition frequency of 10MHz.A breakdown input voltage of 300V volts can be used.When collector current reaches its maximum, it can reach 500mA volts.

MJD350T4G Features

the DC current gain for this device is 30 @ 50mA 10V
a collector emitter saturation voltage of 1V
the emitter base voltage is kept at 3V
the current rating of this device is -500mA
a transition frequency of 10MHz

MJD350T4G Applications

There are a lot of ON Semiconductor MJD350T4G applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter