MJD41CTF Overview

In this device, the DC current gain is 15 @ 3A 4V, which is the ratio between the base current and the collector current.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 1.5V, which allows maximum flexibilSingle BJT transistory in design.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).If the emitter base voltage is kept at 5V, a high level of efficiency can be achieved.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is 6A for this device.A transition frequency of 3MHz is present in the part.This device can take an input voltage of 100V volts before it breaks down.Single BJT transistor is possible for the collector current to fall as low as 6A volts at Single BJT transistors maximum.

MJD41CTF Features

the DC current gain for this device is 15 @ 3A 4V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 600mA, 6A
the emitter base voltage is kept at 5V
the current rating of this device is 6A
a transition frequency of 3MHz

MJD41CTF Applications

There are a lot of ON Semiconductor MJD41CTF applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter