TSC5303DCP ROG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Taiwan Semiconductor Corporation stock available on our website
SOT-23
TSC5303DCP ROG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package
TO-252, (D-Pak)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
3 (168 Hours)
Power - Max
30W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
15 @ 1A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
700mV @ 100mA, 400mA
Voltage - Collector Emitter Breakdown (Max)
400V
Current - Collector (Ic) (Max)
3A
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
5,000
$0.23134
$1.1567
TSC5303DCP ROG Product Details
TSC5303DCP ROG Overview
This device has a DC current gain of 15 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 700mV @ 100mA, 400mA.Product comes in the supplier's device package TO-252, (D-Pak).The device has a 400V maximal voltage - Collector Emitter Breakdown.
TSC5303DCP ROG Features
the DC current gain for this device is 15 @ 1A 5V the vce saturation(Max) is 700mV @ 100mA, 400mA the supplier device package of TO-252, (D-Pak)
TSC5303DCP ROG Applications
There are a lot of Taiwan Semiconductor Corporation TSC5303DCP ROG applications of single BJT transistors.