MJD44E3T4G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 5V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 7V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.

MJD44E3T4G Features

the DC current gain for this device is 1000 @ 5A 5V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 2V @ 20mA, 10A
the emitter base voltage is kept at 7V
the current rating of this device is 10A

MJD44E3T4G Applications

There are a lot of ON Semiconductor MJD44E3T4G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting