MJD44E3T4G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJD44E3T4G Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
5 Weeks
Lifecycle Status
ACTIVE (Last Updated: 12 hours ago)
Contact Plating
Tin
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount
YES
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Subcategory
Other Transistors
Voltage - Rated DC
80V
Max Power Dissipation
1.75W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
10A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJD44
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Case Connection
COLLECTOR
Transistor Application
SWITCHING
Halogen Free
Halogen Free
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
DC Current Gain (hFE) (Min) @ Ic, Vce
1000 @ 5A 5V
Current - Collector Cutoff (Max)
10μA
Vce Saturation (Max) @ Ib, Ic
2V @ 20mA, 10A
Collector Emitter Breakdown Voltage
80V
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
80V
Emitter Base Voltage (VEBO)
7V
hFE Min
1000
Height
2.38mm
Length
6.73mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.607384
$1.607384
10
$1.516400
$15.164
100
$1.430566
$143.0566
500
$1.349591
$674.7955
1000
$1.273199
$1273.199
MJD44E3T4G Product Details
MJD44E3T4G Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 1000 @ 5A 5V.A collector emitter saturation voltage of 1.5V allows maximum design flexibility.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).With the emitter base voltage set at 7V, an efficient operation can be achieved.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (10A).Input voltage breakdown is available at 80V volts.Single BJT transistor is possible for the collector current to fall as low as 10A volts at Single BJT transistors maximum.
MJD44E3T4G Features
the DC current gain for this device is 1000 @ 5A 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 2V @ 20mA, 10A the emitter base voltage is kept at 7V the current rating of this device is 10A
MJD44E3T4G Applications
There are a lot of ON Semiconductor MJD44E3T4G applications of single BJT transistors.