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MJE18004

MJE18004

MJE18004

ON Semiconductor

MJE18004 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE18004 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type Through Hole
Package / Case TO-220-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingTube
Published 2006
Series SWITCHMODE™
JESD-609 Code e0
Pbfree Code no
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureLEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 450V
Max Power Dissipation75W
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating5A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MJE18004
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product13MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 750mV
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 14 @ 300mA 5V
Current - Collector Cutoff (Max) 100μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 750mV @ 500mA, 2.5A
Collector Emitter Breakdown Voltage450V
Transition Frequency 13MHz
Collector Emitter Saturation Voltage920mV
Collector Base Voltage (VCBO) 1kV
Emitter Base Voltage (VEBO) 9V
hFE Min 12
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:3384 items

MJE18004 Product Details

MJE18004 Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 14 @ 300mA 5V.The collector emitter saturation voltage is 920mV, giving you a wide variety of design options.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 500mA, 2.5A.Emitter base voltages of 9V can achieve high levels of efficiency.This device has a current rating of 5A which corresponds to the maximum current it can carry for an indefinite period without deteriorating too much.13MHz is present in the transition frequency.The maximum collector current is 5A volts.

MJE18004 Features


the DC current gain for this device is 14 @ 300mA 5V
a collector emitter saturation voltage of 920mV
the vce saturation(Max) is 750mV @ 500mA, 2.5A
the emitter base voltage is kept at 9V
the current rating of this device is 5A
a transition frequency of 13MHz

MJE18004 Applications


There are a lot of ON Semiconductor MJE18004 applications of single BJT transistors.

  • Driver
  • Muting
  • Interface
  • Inverter

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