MJE18008 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 14 @ 1A 5V.A collector emitter saturation voltage of 300mV allows maximum design flexibility.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 700mV @ 900mA, 4.5V.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.The current rating of this fuse is 8A, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.Single BJT transistor contains a transSingle BJT transistorion frequency of 13MHz.Collector current can be as low as 8A volts at its maximum.

MJE18008 Features

the DC current gain for this device is 14 @ 1A 5V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 700mV @ 900mA, 4.5V
the emitter base voltage is kept at 9V
the current rating of this device is 8A
a transition frequency of 13MHz

MJE18008 Applications

There are a lot of ON Semiconductor MJE18008 applications of single BJT transistors.

• Muting
• Inverter
• Driver
• Interface