KSD569YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
KSD569YTU Datasheet
non-compliant
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Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Supplier Device Package
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
1.5W
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 3A 1V
Current - Collector Cutoff (Max)
10μA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max)
80V
Current - Collector (Ic) (Max)
7A
KSD569YTU Product Details
KSD569YTU Overview
This device has a DC current gain of 100 @ 3A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.Product comes in TO-220-3 supplier package.This device displays a 80V maximum voltage - Collector Emitter Breakdown.
KSD569YTU Features
the DC current gain for this device is 100 @ 3A 1V the vce saturation(Max) is 500mV @ 500mA, 5A the supplier device package of TO-220-3
KSD569YTU Applications
There are a lot of ON Semiconductor KSD569YTU applications of single BJT transistors.