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KSD569YTU

KSD569YTU

KSD569YTU

ON Semiconductor

KSD569YTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

KSD569YTU Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3
Supplier Device Package TO-220-3
Operating Temperature 150°C TJ
Packaging Tube
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 1.5W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 3A 1V
Current - Collector Cutoff (Max) 10μA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 500mA, 5A
Voltage - Collector Emitter Breakdown (Max) 80V
Current - Collector (Ic) (Max) 7A
KSD569YTU Product Details

KSD569YTU Overview


This device has a DC current gain of 100 @ 3A 1V, which is the ratio between the base current and the collector current.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 500mV @ 500mA, 5A.Product comes in TO-220-3 supplier package.This device displays a 80V maximum voltage - Collector Emitter Breakdown.

KSD569YTU Features


the DC current gain for this device is 100 @ 3A 1V
the vce saturation(Max) is 500mV @ 500mA, 5A
the supplier device package of TO-220-3

KSD569YTU Applications


There are a lot of ON Semiconductor KSD569YTU applications of single BJT transistors.

  • Driver
  • Muting
  • Inverter
  • Interface

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