BUX85 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Rochester Electronics, LLC stock available on our website
SOT-23
BUX85 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Through Hole
Package / Case
TO-220-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
JESD-609 Code
e0
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Terminal Finish
TIN LEAD
Additional Feature
LEADFORM OPTIONS ARE AVAILABLE
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
unknown
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Power - Max
50W
Transistor Application
SWITCHING
Polarity/Channel Type
NPN
Transistor Type
NPN
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 100mA 5V
Current - Collector Cutoff (Max)
200μA
JEDEC-95 Code
TO-220AB
Vce Saturation (Max) @ Ib, Ic
1V @ 200mA, 1A
Voltage - Collector Emitter Breakdown (Max)
450V
Current - Collector (Ic) (Max)
2A
Transition Frequency
4MHz
Frequency - Transition
4MHz
RoHS Status
Non-RoHS Compliant
BUX85 Product Details
BUX85 Overview
DC current gain in this device equals 30 @ 100mA 5V, which is the ratio of the base current to the collector current.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 200mA, 1A.4MHz is present in the transition frequency.A 450V maximal voltage - Collector Emitter Breakdown is present in the device.
BUX85 Features
the DC current gain for this device is 30 @ 100mA 5V the vce saturation(Max) is 1V @ 200mA, 1A a transition frequency of 4MHz
BUX85 Applications
There are a lot of Rochester Electronics, LLC BUX85 applications of single BJT transistors.