MJE700G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE700G Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
2 Weeks
Lifecycle Status
ACTIVE (Last Updated: 14 hours ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Bulk
Published
2001
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Additional Feature
BUILT IN BIAS RESISTOR
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Max Power Dissipation
40W
Peak Reflow Temperature (Cel)
260
Current Rating
-4A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJE700
Pin Count
3
Number of Elements
1
Polarity
PNP
Element Configuration
Single
Power Dissipation
40W
Transistor Application
AMPLIFIER
Halogen Free
Halogen Free
Transistor Type
PNP - Darlington
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
4A
DC Current Gain (hFE) (Min) @ Ic, Vce
750 @ 1.5A 3V
Current - Collector Cutoff (Max)
100μA
Vce Saturation (Max) @ Ib, Ic
2.5V @ 30mA, 1.5A
Collector Emitter Breakdown Voltage
60V
Transition Frequency
1MHz
Collector Emitter Saturation Voltage
2.5V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
100
Height
11.0998mm
Length
7.7978mm
Width
2.9972mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.63000
$0.63
10
$0.54600
$5.46
100
$0.41090
$41.09
500
$0.32544
$162.72
MJE700G Product Details
MJE700G Overview
DC current gain in this device equals 750 @ 1.5A 3V, which is the ratio of the base current to the collector current.This design offers maximum flexibility with a collector emitter saturation voltage of 2.5V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 2.5V @ 30mA, 1.5A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.In definition, current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating too much, and the current rating of this device is -4A.As a result, the part has a transition frequency of 1MHz.Collector current can be as low as 4A volts at its maximum.
MJE700G Features
the DC current gain for this device is 750 @ 1.5A 3V a collector emitter saturation voltage of 2.5V the vce saturation(Max) is 2.5V @ 30mA, 1.5A the emitter base voltage is kept at 5V the current rating of this device is -4A a transition frequency of 1MHz
MJE700G Applications
There are a lot of ON Semiconductor MJE700G applications of single BJT transistors.