BCP51E6327HTSA1 Overview
The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 40 @ 150mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 500mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.125MHz is present in the transition frequency.Collector current can be as low as 1A volts at its maximum.
BCP51E6327HTSA1 Features
the DC current gain for this device is 40 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA
the emitter base voltage is kept at 5V
a transition frequency of 125MHz
BCP51E6327HTSA1 Applications
There are a lot of Infineon Technologies BCP51E6327HTSA1 applications of single BJT transistors.
- Inverter
- Muting
- Interface
- Driver
