MJF45H11 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 40 @ 4A 1V DC current gain.With a collector emitter saturation voltage of 1V, it offers maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.Keeping the emitter base voltage at 5V allows for a high level of efficiency.As defined by current rating, the maximum current a fuse can carry without deteriorating too much is -10A for this device.In this part, there is a transition frequency of 40MHz.When collector current reaches its maximum, it can reach 10A volts.
MJF45H11 Features
the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is -10A
a transition frequency of 40MHz
MJF45H11 Applications
There are a lot of ON Semiconductor MJF45H11 applications of single BJT transistors.
- Interface
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- Muting
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- Driver
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- Inverter
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