MPSW45ARLRAG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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MPSW45ARLRAG Datasheet
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Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 Long Body (Formed Leads)
Surface Mount
NO
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory
Other Transistors
Voltage - Rated DC
50V
Max Power Dissipation
1W
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
260
Current Rating
1A
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MPSW45A
Pin Count
3
Number of Elements
1
Polarity
NPN
Element Configuration
Single
Power Dissipation
1W
Transistor Application
AMPLIFIER
Transistor Type
NPN - Darlington
Collector Emitter Voltage (VCEO)
50V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
25000 @ 200mA 5V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.5V @ 2mA, 1A
Collector Emitter Breakdown Voltage
50V
Transition Frequency
100MHz
Collector Emitter Saturation Voltage
1.5V
Max Breakdown Voltage
50V
Frequency - Transition
100MHz
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
12V
hFE Min
4000
Height
6.35mm
Length
6.35mm
Width
25.4mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
RoHS Compliant
Lead Free
Lead Free
MPSW45ARLRAG Product Details
MPSW45ARLRAG Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 25000 @ 200mA 5V DC current gain.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1.5V.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 1.5V @ 2mA, 1A.An emitter's base voltage can be kept at 12V to gain high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 1A.As a result, the part has a transition frequency of 100MHz.Breakdown input voltage is 50V volts.Collector current can be as low as 1A volts at its maximum.
MPSW45ARLRAG Features
the DC current gain for this device is 25000 @ 200mA 5V a collector emitter saturation voltage of 1.5V the vce saturation(Max) is 1.5V @ 2mA, 1A the emitter base voltage is kept at 12V the current rating of this device is 1A a transition frequency of 100MHz
MPSW45ARLRAG Applications
There are a lot of ON Semiconductor MPSW45ARLRAG applications of single BJT transistors.