MMBF4416 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website
SOT-23
MMBF4416 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Mount
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.21.00.95
Subcategory
FET General Purpose Power
Voltage - Rated DC
-35V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
15mA
Frequency
100MHz
Base Part Number
MMBF4416
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
225mW
Current - Test
5mA
Transistor Application
AMPLIFIER
Breakdown Voltage
-30V
Drain to Source Voltage (Vdss)
30V
Transistor Type
N-Channel JFET
Continuous Drain Current (ID)
15mA
Gate to Source Voltage (Vgs)
-30V
Gain
18dB
FET Technology
JUNCTION
Noise Figure
2dB
Voltage - Test
15V
Feedback Cap-Max (Crss)
0.9 pF
Height
1.04mm
Length
2.9mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
MMBF4416 Product Details
MMBF4416 Description
Transistors for RF power that run between 1200 MHz and 1400 MHz and have duty cycles between 1% and 12%. For pulsed applications, these devices perform well. This advancement attempts to increase avalanche energy, conduction loss, dv/dt rate, switching performance, and dv/dt rate. This item is intended for general use and can be used in a number of situations.
MMBF4416 Features
These count on the junction's temperature staying under 150 °C.
In a steady state, these restrictions hold true. Before engaging in pulsed or low duty-cycle operations, consult ON Semiconductor.