MMBF5486 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from ON Semiconductor stock available on our website
SOT-23
MMBF5486 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Lifecycle Status
ACTIVE (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
30mg
Packaging
Tape & Reel (TR)
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Current Rating
10mA
Frequency
400MHz
Base Part Number
MMBF5486
Number of Elements
1
Element Configuration
Single
Operating Mode
DEPLETION MODE
Power Dissipation
225mW
Output Power
225mW
Transistor Application
AMPLIFIER
Transistor Type
N-Channel JFET
Continuous Drain Current (ID)
20mA
Gate to Source Voltage (Vgs)
-25V
FET Technology
METAL-OXIDE SEMICONDUCTOR
Noise Figure
4dB
Voltage - Test
15V
Feedback Cap-Max (Crss)
1 pF
Min Breakdown Voltage
-25V
Height
930μm
Length
2.92mm
Width
1.3mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
MMBF5486 Product Details
MMBF5486 Description
RF power transistors with duty cycles ranging from 1% to 12% that operate between 1200 MHz and 1400 MHz. These devices work well for pulsed applications. This technology attempts to increase avalanche energy, increase dv/dt rate, decrease conduction loss, and improve switching performance. This product can be applied in a variety of circumstances and is meant for general use.
MMBF5486 Features
These are predicated on a junction temperature maximum of 150 °C.
These constraints apply in a steady condition. When using pulsed or low duty-cycle operations, ON Semiconductor should be consulted.