MMBT3906T Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 10mA 1V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of -250mV, which allows maximum flexibilSingle BJT transistory in design.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 400mV @ 5mA, 50mA.Emitter base voltages of -5V can achieve high levels of efficiency.The breakdown input voltage is 40V volts.Single BJT transistor comes in a supplier device package of SOT-523F.Collector Emitter Breakdown occurs at 40VV - Maximum voltage.Maximum collector currents can be below 200mA volts.

MMBT3906T Features

the DC current gain for this device is 100 @ 10mA 1V
a collector emitter saturation voltage of -250mV
the vce saturation(Max) is 400mV @ 5mA, 50mA
the emitter base voltage is kept at -5V
the supplier device package of SOT-523F

MMBT3906T Applications

There are a lot of ON Semiconductor MMBT3906T applications of single BJT transistors.

• Inverter
• Muting
• Interface
• Driver