MMBT4355

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Manufacturer part number:MMBT4355

Manufacturer:ON Semiconductor

Description:MMBT4355 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBT4355 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	compliant
Power - Max	350mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 10mA 10V
Current - Collector Cutoff (Max)	50nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 100mA, 1A
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	800mA

Quantity	Unit Price	Ext. Price
1	$13.643840	$13.64384
10	$12.871547	$128.71547
100	$12.142969	$1214.2969
500	$11.455631	$5727.8155
1000	$10.807199	$10807.199

MMBT4355 Overview

This device has a DC current gain of 100 @ 10mA 10V, which is the ratio between the base current and the collector current.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Single BJT transistor shows a 60V maximal voltage - Collector EmSingle BJT transistorter Breakdown.