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BUJ100,412

  • BUJ100,412
  • BUJ100,412

BUJ100,412

BUJ100,412

WeEn Semiconductors

BUJ100,412 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from WeEn Semiconductors stock available on our website

SOT-23

BUJ100,412 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA)
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Bulk
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Position BOTTOM
Base Part Number BUJ100
Reference Standard IEC-134
JESD-30 Code O-PBCY-T3
Number of Elements 1
Configuration SINGLE
Power - Max 2W
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 9 @ 750mA 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 150mA, 750mA
Voltage - Collector Emitter Breakdown (Max) 400V
Current - Collector (Ic) (Max) 1A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.003438 $1.003438
10 $0.946640 $9.4664
100 $0.893057 $89.3057
500 $0.842506 $421.253
1000 $0.794817 $794.817
BUJ100,412 Product Details

BUJ100,412 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 9 @ 750mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 150mA, 750mA.There is a 400V maximal voltage in the device due to collector-emitter breakdown.

BUJ100,412 Features


the DC current gain for this device is 9 @ 750mA 5V
the vce saturation(Max) is 1V @ 150mA, 750mA

BUJ100,412 Applications


There are a lot of WeEn Semiconductors BUJ100,412 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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