BUJ100,412 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 9 @ 750mA 5V.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 1V @ 150mA, 750mA.There is a 400V maximal voltage in the device due to collector-emitter breakdown.
BUJ100,412 Features
the DC current gain for this device is 9 @ 750mA 5V
the vce saturation(Max) is 1V @ 150mA, 750mA
BUJ100,412 Applications
There are a lot of WeEn Semiconductors BUJ100,412 applications of single BJT transistors.
- Interface
- Inverter
- Driver
- Muting
