KSC1008COBU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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KSC1008COBU Datasheet
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Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA)
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Bulk
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
MATTE TIN
Voltage - Rated DC
60V
Max Power Dissipation
800mW
Terminal Position
BOTTOM
Current Rating
700mA
Frequency
50MHz
Base Part Number
KSC1008
Number of Elements
1
Element Configuration
Single
Power Dissipation
800mW
Transistor Application
SWITCHING
Gain Bandwidth Product
50MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
700mA
DC Current Gain (hFE) (Min) @ Ic, Vce
70 @ 50mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
400mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Transition Frequency
50MHz
Collector Emitter Saturation Voltage
200mV
Collector Base Voltage (VCBO)
80V
Emitter Base Voltage (VEBO)
8V
hFE Min
40
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.138023
$0.138023
10
$0.130210
$1.3021
100
$0.122840
$12.284
500
$0.115887
$57.9435
1000
$0.109327
$109.327
KSC1008COBU Product Details
KSC1008COBU Overview
In this device, the DC current gain is 70 @ 50mA 2V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 200mV ensures maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 400mV @ 50mA, 500mA.A high level of efficiency can be achieved if the base voltage of the emitter remains at 8V.The current rating of this fuse is 700mA, which means that transistor can carry an indefintransistore amount of current wtransistorhout deteriorating too much.There is a transition frequency of 50MHz in the part.When collector current reaches its maximum, it can reach 700mA volts.
KSC1008COBU Features
the DC current gain for this device is 70 @ 50mA 2V a collector emitter saturation voltage of 200mV the vce saturation(Max) is 400mV @ 50mA, 500mA the emitter base voltage is kept at 8V the current rating of this device is 700mA a transition frequency of 50MHz
KSC1008COBU Applications
There are a lot of ON Semiconductor KSC1008COBU applications of single BJT transistors.