MMBT4401WT1 Overview

As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.A transition frequency of 250MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.

MMBT4401WT1 Features

the DC current gain for this device is 100 @ 150mA 1V
a collector emitter saturation voltage of 750mV
the vce saturation(Max) is 750mV @ 50mA, 500mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA
a transition frequency of 250MHz

MMBT4401WT1 Applications

There are a lot of ON Semiconductor MMBT4401WT1 applications of single BJT transistors.

• Muting
• Interface
• Driver
• Inverter