MMBT4401WT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT4401WT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2006
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
150mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
600mA
Frequency
250MHz
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MMBT4401
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
150mW
Transistor Application
SWITCHING
Gain Bandwidth Product
250MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
40V
Max Collector Current
600mA
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 1V
Vce Saturation (Max) @ Ib, Ic
750mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
40V
Transition Frequency
250MHz
Collector Emitter Saturation Voltage
750mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
6V
hFE Min
20
Turn Off Time-Max (toff)
255ns
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBT4401WT1 Product Details
MMBT4401WT1 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 100 @ 150mA 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 750mV.Single BJT transistor means that Ic is at Single BJT transistors maximum value (saturated), so the vce saturation(Max) is equal to 750mV @ 50mA, 500mA.Emitter base voltages of 6V can achieve high levels of efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.A transition frequency of 250MHz is present in the part.Single BJT transistor is possible for the collector current to fall as low as 600mA volts at Single BJT transistors maximum.
MMBT4401WT1 Features
the DC current gain for this device is 100 @ 150mA 1V a collector emitter saturation voltage of 750mV the vce saturation(Max) is 750mV @ 50mA, 500mA the emitter base voltage is kept at 6V the current rating of this device is 600mA a transition frequency of 250MHz
MMBT4401WT1 Applications
There are a lot of ON Semiconductor MMBT4401WT1 applications of single BJT transistors.