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BSS5130T116

BSS5130T116

BSS5130T116

ROHM Semiconductor

BSS5130T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website

SOT-23

BSS5130T116 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 270 @ 100mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 380mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1A
Frequency - Transition 320MHz
RoHS Status ROHS3 Compliant
BSS5130T116 Product Details

BSS5130T116 Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 380mV @ 25mA, 500mA.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.

BSS5130T116 Features


the DC current gain for this device is 270 @ 100mA 2V
the vce saturation(Max) is 380mV @ 25mA, 500mA

BSS5130T116 Applications


There are a lot of ROHM Semiconductor BSS5130T116 applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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