BSS5130T116 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ROHM Semiconductor stock available on our website
SOT-23
BSS5130T116 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
270 @ 100mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
380mV @ 25mA, 500mA
Voltage - Collector Emitter Breakdown (Max)
30V
Current - Collector (Ic) (Max)
1A
Frequency - Transition
320MHz
RoHS Status
ROHS3 Compliant
BSS5130T116 Product Details
BSS5130T116 Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 270 @ 100mA 2V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 380mV @ 25mA, 500mA.A 30V maximal voltage - Collector Emitter Breakdown is present in the device.
BSS5130T116 Features
the DC current gain for this device is 270 @ 100mA 2V the vce saturation(Max) is 380mV @ 25mA, 500mA
BSS5130T116 Applications
There are a lot of ROHM Semiconductor BSS5130T116 applications of single BJT transistors.