MMBT5550LT3G Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 60 @ 10mA 5V.The collector emitter saturation voltage is 150mV, giving you a wide variety of design options.When VCE saturation is 250mV @ 5mA, 50mA, transistor means Ic has reached transistors maximum value (saturated).The emitter base voltage can be kept at 6V for high efficiency.Fuse current ratings refer to how much current the fuse can carry for an indefinite period without deteriorating too much, and this device has a current rating of 600mA.An input voltage of 140V volts is the breakdown voltage.In extreme cases, the collector current can be as low as 60mA volts.

MMBT5550LT3G Features

the DC current gain for this device is 60 @ 10mA 5V
a collector emitter saturation voltage of 150mV
the vce saturation(Max) is 250mV @ 5mA, 50mA
the emitter base voltage is kept at 6V
the current rating of this device is 600mA

MMBT5550LT3G Applications

There are a lot of ON Semiconductor MMBT5550LT3G applications of single BJT transistors.

• Interface
• Inverter
• Driver
• Muting