BCX5216H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website
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BCX5216H6327XTSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-243AA
Number of Pins
3
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
Series
Automotive, AEC-Q101
Part Status
Not For New Designs
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
2W
Configuration
Single
Power - Max
2W
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
60V
Max Collector Current
1A
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 150mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage
60V
Frequency - Transition
125MHz
Collector Base Voltage (VCBO)
60V
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.370550
$0.37055
10
$0.349575
$3.49575
100
$0.329788
$32.9788
500
$0.311121
$155.5605
1000
$0.293510
$293.51
BCX5216H6327XTSA1 Product Details
BCX5216H6327XTSA1 Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.When collector current reaches its maximum, it can reach 1A volts.
BCX5216H6327XTSA1 Features
the DC current gain for this device is 100 @ 150mA 2V the vce saturation(Max) is 500mV @ 50mA, 500mA
BCX5216H6327XTSA1 Applications
There are a lot of Infineon Technologies BCX5216H6327XTSA1 applications of single BJT transistors.