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BCX5216H6327XTSA1

BCX5216H6327XTSA1

BCX5216H6327XTSA1

Infineon Technologies

BCX5216H6327XTSA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available on our website

SOT-23

BCX5216H6327XTSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-243AA
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2011
Series Automotive, AEC-Q101
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 2W
Configuration Single
Power - Max 2W
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 1A
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Collector Emitter Breakdown Voltage 60V
Frequency - Transition 125MHz
Collector Base Voltage (VCBO) 60V
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.370550 $0.37055
10 $0.349575 $3.49575
100 $0.329788 $32.9788
500 $0.311121 $155.5605
1000 $0.293510 $293.51
BCX5216H6327XTSA1 Product Details

BCX5216H6327XTSA1 Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 100 @ 150mA 2V DC current gain.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 500mV @ 50mA, 500mA.When collector current reaches its maximum, it can reach 1A volts.

BCX5216H6327XTSA1 Features


the DC current gain for this device is 100 @ 150mA 2V
the vce saturation(Max) is 500mV @ 50mA, 500mA

BCX5216H6327XTSA1 Applications


There are a lot of Infineon Technologies BCX5216H6327XTSA1 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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