MMBT6521LT1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MMBT6521LT1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
LAST SHIPMENTS (Last Updated: 5 days ago)
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Subcategory
Other Transistors
Voltage - Rated DC
25V
Max Power Dissipation
225mW
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
100mA
[email protected] Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
100mA
DC Current Gain (hFE) (Min) @ Ic, Vce
300 @ 2mA 10V
Current - Collector Cutoff (Max)
500nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 5mA, 50mA
Collector Emitter Breakdown Voltage
25V
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
4V
hFE Min
150
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
MMBT6521LT1 Product Details
MMBT6521LT1 Overview
This device has a DC current gain of 300 @ 2mA 10V, which is the ratio between the base current and the collector current.This system offers maximum design flexibility due to a collector emitter saturation voltage of 500mV.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 4V can result in a high level of efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (100mA).When collector current reaches its maximum, it can reach 100mA volts.
MMBT6521LT1 Features
the DC current gain for this device is 300 @ 2mA 10V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 5mA, 50mA the emitter base voltage is kept at 4V the current rating of this device is 100mA
MMBT6521LT1 Applications
There are a lot of ON Semiconductor MMBT6521LT1 applications of single BJT transistors.