MMBTA56LT1G

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Manufacturer part number:MMBTA56LT1G

Manufacturer:ON Semiconductor

Description:MMBTA56LT1G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:MMBTA56LT1G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Lifecycle Status	ACTIVE (Last Updated: 2 days ago)
Contact Plating	Tin
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Surface Mount	YES
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2006
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Other Transistors
Voltage - Rated DC	-80V
Max Power Dissipation	225mW
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	-500mA
Frequency	50MHz
[email protected] Reflow Temperature-Max (s)	40
Base Part Number	MMBTA56
Pin Count	3
Number of Elements	1
Element Configuration	Single
Power Dissipation	300mW
Power - Max	225mW
Transistor Application	AMPLIFIER
Gain Bandwidth Product	50MHz
Polarity/Channel Type	PNP
Transistor Type	PNP
Collector Emitter Voltage (VCEO)	80V
Max Collector Current	500mA
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA 1V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Collector Emitter Breakdown Voltage	-80V
Transition Frequency	50MHz
Collector Emitter Saturation Voltage	-250mV
Max Breakdown Voltage	80V
Collector Base Voltage (VCBO)	80V
Emitter Base Voltage (VEBO)	4V
hFE Min	100
Height	1.016mm
Length	3.0226mm
Width	1.397mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free