MMBTA56LT1G-HFE Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 100mA 1V.When VCE saturation is 250mV @ 10mA, 100mA, transistor means Ic has reached transistors maximum value (saturated).The device has a 80V maximal voltage - Collector Emitter Breakdown.

MMBTA56LT1G-HFE Features

the DC current gain for this device is 100 @ 100mA 1V
the vce saturation(Max) is 250mV @ 10mA, 100mA

MMBTA56LT1G-HFE Applications

There are a lot of ON Semiconductor MMBTA56LT1G-HFE applications of single BJT transistors.

• Driver
• Inverter
• Muting
• Interface